IndiumV3, Main, Repository, bibRecord, 006390

Investigations of Indium Tin Oxide-Barium Strontium Titanate-Indium Tin Oxide Heterostructure for Tunability

Identifieur interne : 006390 ( Main/Repository ); précédent : 006389; suivant : 006391

Investigations of Indium Tin Oxide-Barium Strontium Titanate-Indium Tin Oxide Heterostructure for Tunability

Auteurs : RBID : Pascal:08-0304958

Descripteurs français

Pascal (Inist)
- Hétérostructure, Circuit accordable, Structure sandwich, Couche ITO, Revêtement multicouche, Propriété matériau, Résistance électrique, Evaluation performance, Circuit adaptation, Paraélectrique, Couche mince, Diélectrique, Métamatériau.

English descriptors

KwdEn :
- Dielectric materials, Heterostructures, ITO layers, Matching circuit, Metamaterial, Multilayer coating, Paraelectric materials, Performance evaluation, Properties of materials, Resistor, Sandwich structure, Thin film, Tunable circuit.

Abstract

This letter reports for the first time the interesting behavior of the interface between indium tin oxide (ITO) as a high resistive electrode and barium strontium titanate tunable paraelectric thin film material. The interface is consisting of barium strontium titanate (BST) thin film dielectric material sandwiched between two ITO high resistive layers, all are integrated above glass substrate. When dc field is applied between the ITO layers, the BST thin film material properties are tuned. It is found that the ITO/BST/ITO heterostructure exhibits a tunable resistor performance. To our knowledge; these results are never reported.

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Pascal:08-0304958

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Investigations of Indium Tin Oxide-Barium Strontium Titanate-Indium Tin Oxide Heterostructure for Tunability</title>
<author><name>MAHMOUD AL AHMAD</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>LAAS CNRS, University of Touluse</s1>
<s2>Toulouse 31077</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Midi-Pyrénées</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Salvagnac, Ludovic" uniqKey="Salvagnac L">Ludovic Salvagnac</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>LAAS CNRS, University of Touluse</s1>
<s2>Toulouse 31077</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Midi-Pyrénées</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Michau, Dominique" uniqKey="Michau D">Dominique Michau</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>ICMCB CNRS, University of Bordeaux</s1>
<s2>Pessac 33608</s2>
<s3>FRA</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Aquitaine</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Maglione, Mario" uniqKey="Maglione M">Mario Maglione</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>ICMCB CNRS, University of Bordeaux</s1>
<s2>Pessac 33608</s2>
<s3>FRA</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Aquitaine</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Plana, Robert" uniqKey="Plana R">Robert Plana</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>LAAS CNRS, University of Touluse</s1>
<s2>Toulouse 31077</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Midi-Pyrénées</region>
</placeName>
</affiliation>
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</titleStmt>
<publicationStmt><idno type="inist">08-0304958</idno>
<date when="2008">2008</date>
<idno type="stanalyst">PASCAL 08-0304958 INIST</idno>
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<seriesStmt><idno type="ISSN">1531-1309</idno>
<title level="j" type="abbreviated">IEEE microw. wirel. compon. lett.</title>
<title level="j" type="main">IEEE microwave and wireless components letters</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Dielectric materials</term>
<term>Heterostructures</term>
<term>ITO layers</term>
<term>Matching circuit</term>
<term>Metamaterial</term>
<term>Multilayer coating</term>
<term>Paraelectric materials</term>
<term>Performance evaluation</term>
<term>Properties of materials</term>
<term>Resistor</term>
<term>Sandwich structure</term>
<term>Thin film</term>
<term>Tunable circuit</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Hétérostructure</term>
<term>Circuit accordable</term>
<term>Structure sandwich</term>
<term>Couche ITO</term>
<term>Revêtement multicouche</term>
<term>Propriété matériau</term>
<term>Résistance électrique</term>
<term>Evaluation performance</term>
<term>Circuit adaptation</term>
<term>Paraélectrique</term>
<term>Couche mince</term>
<term>Diélectrique</term>
<term>Métamatériau</term>
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<front><div type="abstract" xml:lang="en">This letter reports for the first time the interesting behavior of the interface between indium tin oxide (ITO) as a high resistive electrode and barium strontium titanate tunable paraelectric thin film material. The interface is consisting of barium strontium titanate (BST) thin film dielectric material sandwiched between two ITO high resistive layers, all are integrated above glass substrate. When dc field is applied between the ITO layers, the BST thin film material properties are tuned. It is found that the ITO/BST/ITO heterostructure exhibits a tunable resistor performance. To our knowledge; these results are never reported.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1531-1309</s0>
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<fA03 i2="1"><s0>IEEE microw. wirel. compon. lett.</s0>
</fA03>
<fA05><s2>18</s2>
</fA05>
<fA06><s2>6</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Investigations of Indium Tin Oxide-Barium Strontium Titanate-Indium Tin Oxide Heterostructure for Tunability</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>MAHMOUD AL AHMAD</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>SALVAGNAC (Ludovic)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>MICHAU (Dominique)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>MAGLIONE (Mario)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>PLANA (Robert)</s1>
</fA11>
<fA14 i1="01"><s1>LAAS CNRS, University of Touluse</s1>
<s2>Toulouse 31077</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>ICMCB CNRS, University of Bordeaux</s1>
<s2>Pessac 33608</s2>
<s3>FRA</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
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<fA20><s1>398-400</s1>
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<fA21><s1>2008</s1>
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<s5>354000197971000080</s5>
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<fA44><s0>0000</s0>
<s1>© 2008 INIST-CNRS. All rights reserved.</s1>
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<fA45><s0>21 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>08-0304958</s0>
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<fA60><s1>P</s1>
<s3>CR</s3>
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<fA64 i1="01" i2="1"><s0>IEEE microwave and wireless components letters</s0>
</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>This letter reports for the first time the interesting behavior of the interface between indium tin oxide (ITO) as a high resistive electrode and barium strontium titanate tunable paraelectric thin film material. The interface is consisting of barium strontium titanate (BST) thin film dielectric material sandwiched between two ITO high resistive layers, all are integrated above glass substrate. When dc field is applied between the ITO layers, the BST thin film material properties are tuned. It is found that the ITO/BST/ITO heterostructure exhibits a tunable resistor performance. To our knowledge; these results are never reported.</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001D03C</s0>
</fC02>
<fC02 i1="02" i2="X"><s0>001D03D</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Hétérostructure</s0>
<s5>01</s5>
</fC03>
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<s5>01</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Circuit accordable</s0>
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</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Tunable circuit</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Circuito acordable</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Structure sandwich</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Sandwich structure</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Estructura sandwich</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Couche ITO</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>ITO layers</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Revêtement multicouche</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Multilayer coating</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Revestimiento multicapa</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Propriété matériau</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Properties of materials</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Propiedad material</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Résistance électrique</s0>
<s5>07</s5>
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<s5>07</s5>
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<s5>07</s5>
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<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Performance evaluation</s0>
<s5>08</s5>
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<fC03 i1="08" i2="X" l="SPA"><s0>Evaluación prestación</s0>
<s5>08</s5>
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<fC03 i1="09" i2="X" l="FRE"><s0>Circuit adaptation</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Matching circuit</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Circuito adaptación</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Paraélectrique</s0>
<s5>22</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Paraelectric materials</s0>
<s5>22</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Paraeléctrico</s0>
<s5>22</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Couche mince</s0>
<s5>23</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Thin film</s0>
<s5>23</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Capa fina</s0>
<s5>23</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Diélectrique</s0>
<s5>24</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Dielectric materials</s0>
<s5>24</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Dieléctrico</s0>
<s5>24</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Métamatériau</s0>
<s5>25</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Metamaterial</s0>
<s5>25</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Metamaterial</s0>
<s5>25</s5>
</fC03>
<fN21><s1>189</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
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Investigations of Indium Tin Oxide-Barium Strontium Titanate-Indium Tin Oxide Heterostructure for Tunability

Investigations of Indium Tin Oxide-Barium Strontium Titanate-Indium Tin Oxide Heterostructure for Tunability

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri